Advanced Indium Arsenide-Based HEMT Architectures for Terahertz Applications

Cena sprzedaży 563,00 zł Zwykła cena 709,00 zł
Według N. Mohankumar
Pristatymas gali užtrukti 2-3 sav.

Szybka dostawa

130 psl.

2021 m.

Kietas viršelis

Kod kreskowy: 9780367554149
Opis

This book characterizes the HEMT based on InAs III-V material to achieve outstanding current and frequency performance. It explains different types of device architectures available to enhance the performance including InAs based single gate (SG) HEMT and double gate (DG) HEMT. The noise analysis of InAs based SG and DG-HEMT is also discussed.